tm june 20 11 FDMA530PZ single p-channel powertrench ? mosfet ?20 11 fairchild semiconductor corporation FDMA530PZ rev.c1 www.fairchildsemi.com 1 FDMA530PZ single p-channel powertrench ? mosfet ? 30v, ? 6.8a, 35m features ? max r ds(on) = 35m at v gs = ?10v, i d = ?6.8a ? max r ds(on) = 65m at v gs = ?4.5v, i d = ?5.0a ? low profile - 0.8mm maximum - in the new package microfet 2x2 mm rohs compliant general description this device is designed specifical ly for battery charge or load switching in cellular handset and other ultraportable applications . it features a mosf et with low on-state resistance. the microfet 2x2 package offers exceptional thermal per formance for its physical size and is well suited to linear mode applications. mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage ?30 v v gs gate to source voltage 25 v i d drain current -continuous (note 1a) ?6.8 a -pulsed ?24 p d power dissipation (note 1a) 2.4 w power dissipation (note 1b) 0.9 t j , t stg operating and storage junction temperature range ?55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 52 c/w r ja thermal resistance, junction to ambient (note 1b) 145 device marking device package reel size tape width quantity 530 FDMA530PZ microfet 2x2 7?? 8mm 3000 units 5 1 6 2 3 4 d d s d d g bottom drain contact d d s g d d pin 1 drain source microfet 2x2 (bottom view) ? hbm esd protection level > 3k v typical (note 3) ? ? free from halogenated compounds and antimony oxides
FDMA530PZ single p-channel powertrench ? mosfet FDMA530PZ rev.c1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = ?250 a, v gs = 0v ?30 v bv dss t j breakdown voltage temperature coefficient i d = ?250 a, referenced to 25 c ?23 mv/ c i dss zero gate voltage drain current v ds = ?24v, v gs = 0v -1 a i gss gate to source leakage current v gs = 25v, v ds = 0v 10 a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = ?250 a ?1 ?2.1 ?3 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = ?250 a, referenced to 25 c 5.4 mv/ c r ds(on) static drain to source on resistance v gs = ?10v, i d = ?6.8a 30 35 m v gs = ?4.5v, i d = ?5.0a 52 6 5 v gs = ?10v, i d = ?6.8a ,t j = 125 c 43 63 g fs forward transconductance v ds = ?10v, i d = ?6.8a 17 s dynamic characteristics c iss input capacitance v ds = ?15v, v gs = 0v, f = 1mhz 805 1070 pf c oss output capacitance 155 210 pf c rss reverse transfer capacitance 130 195 pf switching characteristics t d(on) turn-on delay time v dd = ?15v, i d = ?6.8a v gs = ?10v, r gen = 6 6 12 ns t r rise time 21 34 ns t d(off) turn-off delay time 43 69 ns t f fall time 31 50 ns q g total gate charge v gs = ?10v v dd = ?15v i d = ?6.8a 16 24 nc q g total gate charge v gs = ?5v 9 11 nc q gs gate to source gate charge 3.1 nc q gd gate to drain ?miller? charge 4.5 nc drain-source diod e characteristics i s maximum continuous drain-source diode forward current ?2 a v sd source to drain diode forward voltage v gs = 0v, i s = ?2a ?0.8 ?1.2 v t rr reverse recovery time i f = ?6.8a, di/dt = 100a/ s 24 36 ns q rr reverse recovery charge 19 29 nc notes: 1: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. 2: pulse test: pulse width < 30 0 s, duty cycle < 2.0%. 3: the diode connected between the gate and the source serves only as protection against esd. no gate overvoltage rating is implie d. a. 52c/w when mounted on a 1 in 2 pad of 2 oz copper b.145c/w when mounted on a minimum pad of 2 oz copper r g gate resistance 1 18 38
FDMA530PZ single p-channel powertrench ? mosfet FDMA530PZ rev.c1 www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 012345 0 4 8 12 16 20 24 v gs = - 4.0v v gs = - 3.5v v gs = - 4.5v v gs = -10v pulse duration = 80 s duty cycle = 0.5%max v gs = - 5.0v - i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 04812162024 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs = -5.0v v gs = -4.0v v gs = -10v v gs = -4.5v v gs = -3.5v pulse duration = 80 s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 1.8 i d = -6.8a v gs = -10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 50 100 150 200 pulse duration = 80 s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = -3.4a r ds(on) , drain to source on-resistance ( m ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 123456 0 6 12 18 24 v dd = -5v pulse duration = 80 s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 125 o c - i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.00.40.81.21.6 0.0001 0.001 0.01 0.1 1 10 30 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMA530PZ single p-channel powertrench ? mosfet FDMA530PZ rev.c1 www.fairchildsemi.com 4 figure 7. 0 3 6 9 12 15 18 0 2 4 6 8 10 i d = -6.8a v dd = -15v v dd = -10v -v gs , gate to source voltage(v) q g , gate charge(nc) v dd = -20v gate charge characteristics figure 8. 0.1 1 10 100 1000 2000 50 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 20 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0 5 10 15 20 25 30 35 1e-9 1e-8 1e-7 1e-6 1e-5 1e-4 1e-3 v gs = 0v t j = 25 o c t j = 125 o c -v gs , gate to source voltage(v) -i g , gate leakage current(a) g a t e l e a k a g e c u r r e n t v s g a t e t o s o u r c e v o l t a g e figure 10. 0.1 1 10 100 0.01 0.1 1 10 v gs = -4.5v single pulse r ja = 145 o c/w t a = 25 o c 1s dc 10s 100ms 10ms 1ms 100us r ds(on) limit -i d , drain current (a) -v ds , drain to source voltage (v) 60 f o r w a r d b i a s s a f e operating area figure 11. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0 30 60 90 120 150 single pulse r ja = 145 o c/w t a =25 o c p ( pk ) , peak transient power (w) t, pulse width (s) s i n g l e p u l s e m a x i m u m power dissipation f i g u r e 1 2 . t r a n s i e n t t h e r m a l response curv e 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a typical characteristics t j = 25c unless otherwise noted
FDMA530PZ single p-channel powertrench ? mosfet FDMA530PZ rev.c1 www.fairchildsemi.com 5 dimensional outlin e and pad layout
FDMA530PZ single p-channel powertrench ? mosfet FDMA530PZ rev.c1 www.fairchildsemi.com 6 anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. ? trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform wh en properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? auto-spm? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? the right technology for your success? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. rev. i55
|
